半導體製程方法METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/163,378

專利證號

US 8,906,778 B2

專利獲證名稱

半導體製程方法METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2014/12/09

技術說明

於成長基板上成長氮化物半導體基板，再利用蝕刻技術製作出凹凸結構之圖案化氮化物半導體基板，使圖案化氮化物基板與成長基板之間接觸面積縮小。凹凸結構之圖案化氮化物半導體基板可以是化學濕式蝕刻或乾式蝕刻進行，接著作後續磊晶以及氮化物半導體元件製作。再用晶圓接合方式將氮化物半導體元件轉移至接合基板。晶圓接合過程因熱膨脹係數不同， 並產生應力集中。而導致氮化物半導體元件與成長基板剝離。此製程無需使用雷射剝離法，能有效降低成本。 Nitride semiconductor substrate was epitaxial on the growth substrate. Next patterned nitride semiconductor substrate was fabricated by wet etching technique to decrease the contact area between nitride semiconductor substrate and the growth substrate. Then the epitaxial growth of thin films was processed to fabricate the nitride semiconductor devices, followed by wafer bonding to transfer nitride semiconductor devices to the bonding substrate. Nitride semiconductor devices were separated from the growth substrate owing to stress concentration during wafer bonding. The stress concentration was formed by the different thermal expansion coefficients between the growth substrate and nitride semiconductor substrate. Hence this device fabrication could effectively lower its cost without laser lift off process.

備註

本部(收文號1090020336)同意該校109年4月6日交大研產學字第1091002952號函申請終止維護專利(交大)

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