DIFFUSION BARRIER STRUCTURE, AND CONDUCTIVE LAMINATE AND MANUFACTURING METHOD THEREOF

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

16/510,208

專利證號

US 11,331,883

專利獲證名稱

DIFFUSION BARRIER STRUCTURE, AND CONDUCTIVE LAMINATE AND MANUFACTURING METHOD THEREOF

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2022/05/17

技術說明

【中文】 本發明公開一種擴散阻障結構、導電疊層及其製法，導電疊層包括一基板、一擴散阻障結構以及一導電層，擴散阻障結構形成於基板和導電層之間，擴散阻障結構包括一非連續改質層以及一阻障層，非連續改質層設置於所述基板上，所述非連續改質層的材料是一具有親水基的高分子。阻障層設置於所述基板和所述非連續改質層上，所述阻障層的材料至少包括一自修復高分子。擴散阻障結構可阻障金屬原子的擴散，避免導電疊層在加工熱處理時，因溫度升高導致導電疊層的特性退化或毀損。 【英文】 A diffusion barrier structure, and a conductive laminate and a manufacturing method thereof are provided. The diffusion barrier is disposed between a substrate and a conductive layer. The diffusion barrier includes a discontinuous modifying layer and a barrier layer. The discontinuous modifying layer is disposed on the substrate and a material of the discontinuous modifying layer includes a polymer with at least one hydrophilic group. The barrier layer disposed on the substrate and the discontinuous modifying layer. A material of the barrier layer includes a self-healing polymer. The diffusion barrier structure can block diffusions of metal atoms. Therefore, the conductive laminate will not degrade or ruin due to high temperature under thermal process.

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