薄膜電阻合金

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

104117789

專利證號

I 525196

專利獲證名稱

薄膜電阻合金

專利所屬機關 (申請機關)

國立屏東科技大學

獲證日期

2016/03/11

技術說明

薄膜晶片電阻其尺寸的精密及電性之精準度相對於厚膜來說更具有優越性及挑戰性，同樣其售價亦高於厚膜晶片電阻好幾倍；目前高阻值薄膜晶片開發備受矚目，隨著阻值增加且沉積電阻薄膜厚度越薄情況下，如何穩定電性為相當重要的研究課題。薄膜電阻主要要求為低電阻溫度係數(TCR)及電阻值精確度；電阻溫度係數要求規格必須在±50 ppm以內及電阻值誤差量需在±0.1 %內，此為薄膜電阻電性之基本要求。本研究導入高熵合金之概念，以Ni-Cr-Mn-Y元素為基礎，再摻雜稀有金屬。可以高熵合金應用面不只在機械性質之改善，亦可應用於電子元件電阻率提升。使用Ni-Cr-Mn-Y-X此合金靶材，再經過退火後，製成高阻值薄膜晶片電阻，此薄膜電阻率可達目前業界3倍左右,以補足台灣在高阻值薄膜晶片電阻的產品範圍，符合市場品質需求。可使業界可擴展到高階產品，使薄膜電阻在材料組成技術突破下，增加國際競爭性。 Market for chip resistor is expected to witness healthy growth owing to increased overall demand in two growth areas including the high resistance and high precision resistance markets. The production of thin film resistors are using the sputtering process, low TCR (± 50 ppm/°C) and high precision (±0.1 %) are requested in the applications. Based on Ni-Cr-Mn-Y composition, the concept of high entropy alloy is introduced. The effect of rare earth element additions on the electrical properties of Ni-Cr-Mn-Y resistive films by magnetron sputtering is investigated. It is found that the film with high resistivity can be obtained, since the concept of high entropy alloy are used in this project. The thin film chip resistors with high resistance, which is the product specification can be reached at 0603 1000KΩ , tolerance is within ± 0.1%, TCR ± 50ppm / ℃.

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