波導構造的製作方法/METHOD FOR FABRICATING WAVEGUIDE CONSTRUCTION

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

15/642,354

專利證號

US 9,946,021 B1

專利獲證名稱

波導構造的製作方法/METHOD FOR FABRICATING WAVEGUIDE CONSTRUCTION

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2018/04/17

技術說明

波導在光電元件負責傳輸大資訊量的光通訊低損耗波導及強電光轉換主動層波導，製作重要因素。本工作中提出利用量子井混成方式來製作一個可光場及電流侷限性埋入式異質半導體波導。在晶圖表面踐鍍的二氧化矽做為介電質材料，並對二氧化矽定義條狀式蝕刻出目標波導區域，此材料在快速熱退火時候產生應力在晶圓表面，晶圓的Ga 會擴散到二氧化矽而在材料留下空缺進而改善熱混合製程。藉由無雜質缺位品格擴散方式改變波導參雜濃度，主動層參雜濃度的改變影響了操作波長藍位移、能帶變寬變大進而產生折射率差增大形成渡導結構，使光膜態坦入至材料裡頭降低傳輸損耗，主動層選擇InGaAsP/InGaAsP材料增加能帶偏移以提高電子侷限能力。 Due to the dramatic increase in the need of optical communications, it becomes more important on developing the core of photonics integration elements. Low-loss and high electrical-and-optical conversion efficiency optical waveguide thus plays an essential part. In this invention, quantum well intermixing (QWI) based on InGaAsP/InGaAsP material is applied for fabricating the waveguide with the buried semiconductor heterostructure. QWI with Impurity free vacancy diffusion (IFVD) enhanced by depositing Si02 is used for changing the bandgap of InGaAsP/InGaAsP quantum well toward the blue shift regime, reducing refractive index. Therefore, patterning Si02 could define both electrical and optical confinement optical waveguide. The Si02 film is sputtered on top of the wafer as dielectric material and also the pattern area of optical waveguide. After rapid thermal annealing, the reaction of Ga atom with Si02 will induce vacancy, improving the interdiffusion in atom of quantum well. By increasing bandgap in Si02 region, the accompanied index change defines the optical waveguide area. Above 80nm wavelength shift between in and outside Si02region was observed, where the window of 3, 5, and 7μm were used for setting optical waveguide.

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