電阻式記憶體裝置及其操作方法RESISTIVE RANDOM ACCESS MEMORY DEVICE AND OPERATING METHOD THEREOF

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/753,526

專利證號

US 8,842,462 B2

專利獲證名稱

電阻式記憶體裝置及其操作方法RESISTIVE RANDOM ACCESS MEMORY DEVICE AND OPERATING METHOD THEREOF

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2014/09/23

技術說明

隨著科技的發展，非揮發性記憶體已被廣泛地應用各式電子裝置上，如筆記型電腦、行動電話與平板電腦等。其中，電阻式記憶體元件由於具有結構簡單、低耗損能量、低操作電壓和高操作速度等優點，已成為此領域重要的研究議題。 電阻式記憶體裝置及其操作方法在此揭露。電阻式記憶體裝置包括至少一個電阻式記憶體元件以及控制電路。電阻式記憶體元件包括底電極、非晶態氧化銦鎵鋅(amorphous Indium-Gallium-Zinc-Oxide，a-IGZO)層、鈦層以及頂電極。非晶態氧化銦鎵鋅層配置於底電極上。鈦層配置於非晶態氧化銦鎵鋅層。頂電極配置於鈦層上。控制電路用以提供電訊號給電阻式記憶體元件，以改變電阻式記憶體元件的電阻值。 With advances in technology, non-volatile memories have been widely used in various kinds of electronic devices, such as laptop computers, mobile phones, tablet computers, and so on. The resistive random access memory (RRAM) cell with characteristics of simple structure, low power consumption, low operating voltage, and high operating speed has become an important subject of research in the field of non-volatile memories. Due to the constraints with respect to the manufacturing materials and manufacturing conditions (e.g., temperature used in the manufacturing process) of currently existing non-volatile memories, the manufacturing processes associated with non-volatile memories are not compatible with the manufacturing processes of display panels. Hence, it is still difficult to integrate non-volatile memories into a system-on-panel device. Hence, to enable more widespread use of the RRAM cell, a new kind of RRAM cell should be provided.

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