NANO-TWINNED COPPER LAYER WITH DOPED METAL ELEMENT, SUBSTRATE COMPRISING THE SAME AND METHOD FOR PREPARING THE SAME

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

17/321,717

專利證號

US 11,560,639 B2

專利獲證名稱

NANO-TWINNED COPPER LAYER WITH DOPED METAL ELEMENT, SUBSTRATE COMPRISING THE SAME AND METHOD FOR PREPARING THE SAME

專利所屬機關 (申請機關)

國立陽明交通大學

獲證日期

2023/01/24

技術說明

【中文】 本揭露關於一種摻雜金屬元素的奈米雙晶銅金屬層，其中於奈米雙晶銅金屬層的一表面至深度為0.3 μm的區域內，奈米雙晶銅金屬層摻雜有至少一選自由銀、鎳、鋁、金、鉑、鎂、鈦、鋅、鈀、錳及鎘所組成之群組之金屬元素，且該區域內的金屬元素的含量介於0.5 at%至20 at%之間；其中，奈米雙晶銅金屬層之50%以上的體積包括複數雙晶晶粒。此外，本揭露更提供包含前述奈米雙晶銅金屬層的基板及前述奈米雙晶銅金屬層的製備方法。 【英文】 A nano-twinned copper layer with a doped metal element is disclosed, wherein the nano-twinned copper is doped with at least one metal element selected from the group consisting of Ag, Ni, Al, Au, Pt, Mg, Ti, Zn, Pd, Mn and Cd in a region from a surface of the nano-twinned copper layer to a depth being 0.3 μm, and a content of the metal element in the region is ranged from 0.5 at% to 20 at%. In addition, at least 50% in volume of the nano-twinned copper layer comprises plural crystal grains. Furthermore, a substrate comprising the aforesaid nano-twinned copper layer and a method for manufacturing the aforesaid nano-twinned copper layer are also disclosed.

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