Hexacene derivative, method for forming hexacene, method for forming hexacene crystal, process for making organic semiconductor device, and organic semiconductor device

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/668,334

專利證號

US 9,059,408 B2

專利獲證名稱

Hexacene derivative, method for forming hexacene, method for forming hexacene crystal, process for making organic semiconductor device, and organic semiconductor device

專利所屬機關 (申請機關)

中央研究院

獲證日期

2015/06/16

技術說明

A hexacene derivative is described, being expressed by formula (1): wherein X1-X6 denote the presence or absence of a carbonyl bridge [—C(═O)—], with a proviso that at least one of X1-X6 is a carbonyl bridge while any six-member ring absent of a carbonyl bridge is aromatic. A method for forming hexacene is also described, including: thermally treating the hexacene derivative to expel volatile units of CO from the hexacene derivative.

備註

本部(收文號1100056059)同意該校110年9月3日智財字第1100507762號函申請終止維護專利(中研院)

連絡單位 (專責單位/部門名稱)

智財技轉處

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02-2787-2508

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