Substrate surface metallization method and substrate having metallized surface manufactured by the same

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

15/343,029

專利證號

US 9,875,984 B2

專利獲證名稱

Substrate surface metallization method and substrate having metallized surface manufactured by the same

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2018/01/23

技術說明

在無熱退火的情況下，利用3-[2-(2-aminoethylamino)ethylamino] propyl-trimethoxysilane (ETAS)作為矽基板表面改質的前驅物並有效吸附奈米鈀觸媒(PVP-nPd)以利後續無電電鍍鎳磷金屬沉積之製成。而ETAS作為表面改質時會於矽基板表面產生共價鍵鍵結，此外ETAS的氨基團能夠作為奈米鈀觸媒與矽基板之間的橋樑，有效提升奈米鈀觸媒的附著特性。經由實驗的檢測發現，利用ETAS改質過後的矽基板吸附奈米鈀觸媒後再進行無電電鍍鎳磷金屬的附著能力比起應用商業用錫鈀觸媒膠體在矽基板或是ETAS改質後的矽基板上沉積無電電鍍鎳磷金屬，能夠分別增加4倍及2倍的附著效果。 A post-annealing-free, adhesive nickel/phosphorous (Ni/P) layer was deposited on a 3-[2-(2-aminoethylamino)ethylamino] propyl-trimethoxysilane-modified (ETAS-modified) silicon (Si) surface through an electroless deposition process catalyzed by a novel polyvinylpyrrolidone-capped palladium nanocluster (PVP-nPd). ETAS was covalently bonded on the Si surface, whereas the amino groups on ETAS bridged with the palladium core in the PVP-nPd clusters. Because of the mentioned two effects, the deposited Ni/P layer showed superior adhesion on the Si wafer without the requirement of conventional annealing treatment. Compared with the Ni/P films deposited on bare and ETAS-modified Si surfaces by using commercial Sn/Pd colloids, the adhesion of the Ni/P film catalyzed by PVP-nPd on the ETAS-modified Si wafer improved 4- and 2-fold, respectively.

備註

連絡單位 (專責單位/部門名稱)

智財技轉組

連絡電話

03-5715131-62219

網址