氮化鎵高電子移動率電晶體/GaN High Electron Mobility Transistor

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

109135717

專利證號

I 741834

專利獲證名稱

氮化鎵高電子移動率電晶體/GaN High Electron Mobility Transistor

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2021/10/01

技術說明

一種氮化鎵高電子移動率電晶體，用以解決習知氮化鎵高電子移動率電晶體為抑制扭結效應而增加製造成本及功率消耗的問題。係包含：一基板；一緩衝層，位於該基板上；一阻擋層，疊層於該緩衝層上，該阻擋層是p型半導體或寬能隙材料；一通道層，疊層於該阻擋層上；及一供應層，疊層於該通道層上，一閘極位於該供應層上，一源極及一汲極分別電連接該通道層及該供應層。 A GaN high electron mobility transistor is provided to solve the problem of increased manufacturing cost and power consumption to prevent the the kink effect of the conventional GaN high electron mobility transistor. The transistor comprises a substrate, a buffer layer is located on the substrate, a barrier layer is laminated on the buffer layer, a channel layer is laminated on the barrier layer and a supply layer is laminated on the channel layer. The barrier layer is either a p-type semiconductor or a wide band gap material. A gate electrode is located on the supply layer. A source electrode and a drain electrode are respectively electrically connected to the channel layer and the supply layer.

備註

連絡單位 (專責單位/部門名稱)

產學營運及推廣教育處

連絡電話

(07)525-2000#2651

網址