電阻式記憶體

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

105103135

專利證號

I 596609

專利獲證名稱

電阻式記憶體

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2017/08/21

技術說明

本發明主要揭示一種電阻式記憶體，用於解決習知電阻式記憶體切換速度慢的問題，本發明之電阻式記憶體可包含：一導熱層；一第一電極層，疊設於該導熱層；一熱圍阻體，疊設於該第一電極層，該熱圍阻體具有一通孔，該第一電極層局部裸露於該通孔內；一變阻層，由該熱圍阻體之通孔內裸露的第一電極層向外延伸至該通孔外的熱圍阻體表面；及一第二電極層，疊設於該變阻層。藉此，可確實解決上述問題。 This invention mainly discloses a resistance random access memory which is used to solve a problem of the known resistance random access memory switching slowly. The resistance random access memory of this invention comprises a heat-conducting layer, a first electrode layer, a heat surround member, a resistance variation layer and a second electrode layer. The first electrode layer is staked on the heat-conducting layer. The heat surround member is staked on the first electrode layer and has a through hole to expose a part of the first electrode layer in the through hole. The resistance variation layer extends from the first electrode layer in the through hole outward to a surface of the heat surround member out of the through hole. The second electrode layer is stacked on the resistance variation layer. Thus, it can actually resolve the said problem.

備註

本會(收文號1120021252)同意該校112年4月13日中產營字第1121400359號函申請終止維護專利(國立中山大學)

連絡單位 (專責單位/部門名稱)

產學營運及推廣教育處

連絡電話

(07)525-2000#2651

網址