低電阻之熱電材料及其製備方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

099139575

專利證號

I 483439

專利獲證名稱

低電阻之熱電材料及其製備方法

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2015/05/01

技術說明

熱電材料(Thermoelectric materials)是近年來備受重視的能源材料，Ag-Sb-Te材料為具有高潛力之熱電材料，尤其是其三元AgSbTe2化合物。熱電優質(z=S2/κρ)為熱電轉換效率指標。AgSbTe2化合物為低熱傳導係數(κp=0.6 WK-1 m-1)之p型半導體，但其高電阻性質(ρ=7.5*10-3 Ωcm)限制其應用性。本發明以實驗方法找出Ag-Sb-Te三元系統共晶點，並透過Class I 反應: L=AgSbTe2+Ag2Te+δ製備高機械強度、存在均勻奈米結構之Ag-Sb-Te三元塊材合金。此具奈米結構之Ag-Sb-Te三元塊材合金，與三元AgSbTe2化合物不同，具有低電阻性質(ρ=8.4*10-4Ωcm)。 Thermoelectric material has attracted more attentions as a promising energy material in recent years. Research nowadays are devoted to improvement of figure-of-merit (zT=S2T/ρκ). Motivated by p-type AgSbTe2 compound, ternary Ag-Sb-Te have been reported as an important thermoelectric system. Although ternary AgSbTe2 compound has been considered as a candidate for thermoelectric materials with the advantages of low thermal conductivity (κp=0.6 WK-1 m-1), the relatively high electrical resistivity (ρ=7.5*10-3 Ωcm) has limited its applications. This invention experimentally discovered the brand-new Ag-Sb-Te bulk materials with very fine microstructures that nanoscale Ag2Te phase precipitate uniformly in the multi-phase matrix through class I reaction, liquid=Ag2Te+AgSbTe2+δ. Moreover, the electrical resistivity (ρ) measured by four-probe method is as low as 8.4*10-4(Ωm) at room temperature, which guarantees the promise of those ternary bulk materials.

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