奈米電極晶片 | 專利查詢

奈米電極晶片


專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

101139140

專利證號

I 593797

專利獲證名稱

奈米電極晶片

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2017/08/01

技術說明

本發明提供一種奈米電極晶片,可應用於使單一細胞之細胞膜局部電穿孔以讓微流體物質進入單一細胞。奈米電極晶片包含矽基層、結構層、絕緣層以及微流體層。當單一細胞被放置於已產生至少一電場之複數個奈米電極間之孔隙上,電場作用於單一細胞,使單一細胞之細胞膜局部電穿孔以產生複數個奈米小孔,隨後,微流體物質(例如藥物、DNA分子等)將可經由小孔流入單一細胞內。此發明不僅能夠有效、精準地控制細胞膜上小孔的尺寸,同時也可清晰地提供後續追蹤微流體物質進入單一細胞中所需光學觀測的路徑。 The present invention disclosed a nano-electrode based transparent chip, which is applicable to perform a micro fluidic substances diffused through a specific region of single cell membrane by electroporation technique with membrane reversibility. The chip comprises a silicon-based layer, different structural layers, insulating layer and a micro fluidic layer. When the individual single cell was placed on the gap of a plurality of triangular-shaped nano-electrodes with an electric field, then the electric field can intense on a specific region of the individual single cell membrane, resulting to form the nanopores on the membrane, which can deliver drugs, DNA molecules form outside of the cell to inside of the cell with high transfection rate and high cell viability. This technique can not only generate well-controlled nano-pores to allow rapid recovery of the cell membrane, but also provide clear optical path for potentially monitoring/tracking the drugs into the cell.

備註

連絡單位 (專責單位/部門名稱)

智財技轉組

連絡電話

03-5715131-62219


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