System and method for temperature sensing of three-dimensional integrated circuit

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

14/713,317

專利證號

US 9,857,240 B2

專利獲證名稱

System and method for temperature sensing of three-dimensional integrated circuit

專利所屬機關 (申請機關)

國立成功大學

獲證日期

2018/01/02

技術說明

以三維積體電路技術來實現系統晶片，其需要在不同層晶片置入溫度感測器配合動態溫度控管機制來確保系統的可靠度，然而溫度感測器架構選取與電路設計往往受限於不同層晶片的製程技術，增加實現整體溫度感測系統之複雜度。本發明中提出了一個利用矽穿孔(TSVs)的溫度感測機制，有別於傳統先在各個待測點附近加入溫度感測器，之後將感測之溫度值以電壓、電流或數位碼等電性訊號傳遞至控制單元的做法，本發明直接將待測點的溫度以熱訊號方式直接傳遞至某一晶片層，之後再經過溫度感測器將熱訊號轉換為電性訊號傳遞至控制單元。對於需要感測位於不同晶片層之複數熱點溫度的三維晶片系統整合應用而言，本發明可大幅降低溫度感測系統之設計複雜度與實作成本。 In modern three-dimensional integrated circuit (3D IC) designs, on-chip thermal sensing on different chip layers combined with dynamic thermal management are very important for system reliability. However, the structure selection and circuit design of on-chip temperature sensors are usually limited by the fabrication processes of chip layers, and this limitation makes the temperature sensing system more complex. This invention proposed a new temperature sensing scheme with through silicon vias (TSVs), and the proposed scheme can effectively simplify the design effort and implementation cost for multi-hotspot temperature sensing on different chip layers. Therefore, the invented temperature sensing scheme is well-suited to modern 3D IC designs.

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