高壓電特性鋯鈦酸鉛薄膜結構之製造方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

097144678

專利證號

I 424597

專利獲證名稱

高壓電特性鋯鈦酸鉛薄膜結構之製造方法

專利所屬機關 (申請機關)

國立中興大學

獲證日期

2014/01/21

技術說明

本發明係一種高壓電特性鋯鈦酸鉛薄膜結構及製造方法，該高壓電特性鋯鈦酸鉛薄膜之製造方法其步驟包含沈積形成氮化矽層於基板、塗佈鋯鈦酸鉛於氮化矽層、低溫焦化處理及高溫燒結製程，其中，該低溫焦化處理步驟係將包含有氮化矽層及塗佈後該鋯鈦酸鉛溶膠之基板加熱，使該鋯鈦酸鉛溶膠內之有機物揮發而形成一硬化層於該氮化矽層之表面；該高溫燒結製程係將低溫膠化處理後的基板放入高溫爐內增加溫度使該硬化層進一步結晶形成一鋯鈦酸鉛薄膜於該氮化物層表面；依據前述製程步驟所製作完橙的的高壓電特性鋯鈦酸鉛薄膜具有良好的壓電特性，可減少常解決習用技術之鋯鈦酸鉛薄膜容易老化和疲勞的問題。 Recently, PZT thin film actuators and sensors have received increasing attention because of their high frequency bandwidth, large actuation strength, fast response, small size and high sensitivity. To fabricate PZT thin film, one of the most promising techniques is sol-gel process. Although recipes to fabricate sol-gel derived PZT film have long been available in the literature, critical parameters to fabricate high yield, good quality and large crack-free-area PZT film have not been identified and reported. Also, how to fabricate sol-gel derived PZT film on different substrates for various application have not been studied. This patent is to fabricate PZT thin film on SiNx/SiO2/Si subatrate. Process parameters such as components of sol, temperature and time of pyrolysis process, and procedure of sintering process can significantly affect the quality of PZT films. This method could reduce the aging and fatigue of PZT film and enhance the piezoelectric properties.

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本部(收文號1080029338)同意該校108年5月10日興產字第1084300302號函申請終止維護專利

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