摻鈦藍寶石晶體光纖、其製作方法及其應用之寬頻光源Ti:Sapphire crystal fiber, manufacturing method thereof, and wide band light source using the same

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

14/073,197

專利證號

US 9,153,933 B2

專利獲證名稱

摻鈦藍寶石晶體光纖、其製作方法及其應用之寬頻光源Ti:Sapphire crystal fiber, manufacturing method thereof, and wide band light source using the same

專利所屬機關 (申請機關)

國立臺灣大學

獲證日期

2015/10/06

技術說明

一種摻鈦藍寶石晶體光纖，其結構為具單一纖衣層被覆之晶體光纖，晶體光纖之製程使用雷射加熱基座長晶法製作來製作單晶光纖，此單晶晶纖之直徑可以小到50微米以下，並將單晶光纖以適當條件退火以降低四價鈦離子濃度，增加三價鈦離子濃度，以降低在螢光波段之殘留損耗，改善晶纖品質，並提升發光效率，退火後之單晶光纖再以共抽絲雷射加熱基座長晶法製作成具有纖衣之晶體光纖，降低晶纖之傳輸損耗與模態數。此摻鈦藍寶石晶體光纖可作為寬頻光源、光纖雷射之增益介質，具有低激發光源功率，高效率之特性。 A kind of Ti:sapphire crystal fiber, with its structure of a single-clad crystal fiber. The single-crystal fiber is grown by the laser heated pedestal growth method. The diameter of the single-crystal fiber can be less than 50 m. The as-grown single-crystal fiber is annealed with a suitable condition to reduce the concentration of tetravalent Ti ions, and increase the concentration of the trivalent ions. The annealing process is to reduce the residual absorption at the fluorescence band, improve the crystal quality for better optical efficiency. The annealed single-crystal fiber is grown into the single-clad crystal fiber by the co-drawing laser heated pedestal growth method with a lower propagation loss and a reduced number of modes. The Ti:sapphire crystal fiber can be used as the gain medium of the broadband light sources and the tunable lasers. The features include the reduced pump power and high optical efficiency.

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