具有屏蔽效應的缺陷接地結構

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

099130391

專利證號

I 445243

專利獲證名稱

具有屏蔽效應的缺陷接地結構

專利所屬機關 (申請機關)

國立臺灣大學

獲證日期

2014/07/11

技術說明

一種具有屏蔽效應的缺陷接地結構，包括一介電層、一缺陷金屬層、一接地金屬層以及至少一導電蕈狀結構。缺陷金屬層配置介電層中，且具有一線形開口。另外，導電蕈狀結構配置於缺陷金屬層與接地金屬層之間，並沿線形開口之延伸方向週期性地排列。其中導電蕈狀結構包括一蕈傘部與一蕈柄部。蕈傘部平行缺陷金屬層並與缺陷金屬層相距一距離，蕈傘部於缺陷金屬層上的投影區域涵蓋一段對應蕈傘部的線形開口。蕈柄部連接蕈傘部與接地金屬層。 A defected ground structure with shielding effect is provided. The structure includes a dielectric layer, a defected metal layer, a grounded metal layer and at least a conductive mushroom-like structure. The defected metal layer has a line-shaped opening and set in the dielectric layer. The conductive mushroom-like structure is set between the defected metal layer and the grounded metal layer and arranged along the extension direction of the line-shaped opening periodically. The conductive mushroom-like structure includes a fungating part and a stipe part. The fungating part is parallel to the defected metal layer and a distance away from the defected metal layer. The projection area of the fungating part on the defected metal layer covers a length of the line-shaped opening corresponding to the fungating part. The stipe part connects the fungating part and the grounded metal layer.

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