電流鏡調整型位準偏移器Current Mirror Modified Level Shifter

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/349,982

專利證號

US 8,653,877 B2

專利獲證名稱

電流鏡調整型位準偏移器Current Mirror Modified Level Shifter

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2014/02/18

技術說明

本發明提出一種電流鏡調整型位準偏移器包括一對PMOS包含PMOS (MPL)及PMOS (MPR)，其中端點Vot連接PMOS (MPR)之汲極;一對NMOS包含NMOS (MNL)及NMOS (MNR)；其中PMOS (MPL)與PMOS (MPR)源極分別耦合至高電位(HV); PMOS (MPL)與PMOS (MPR)閘極耦合一起，經由介於 PMOS (MPL)與PMOS (MPR) 閘極間端點Vm; 及一懸掛PMOS (MPM) 耦合至PMOS (MPL)汲極，端點Vm 耦合至一介於PMOS (MPM) 汲極與NMOS (MNL) 汲極間的端點Va。 A current mirror modified level shifter includes a pair of PMOS including a PMOS (MPL) and a PMOS (MPR), wherein a Vot node connected to a drain of the PMOS (MPR); a pair of NMOS including NMOS (MNL) and a NMOS (MNR), wherein sources of the PMOS (MPL) and the PMOS (MPR) are coupled to a high voltage (HV), respectively; gates of the PMOS (MPL) and the PMOS (MPR) coupled together through a Vm node which located between the gates of the PMOS (MPL) and the PMOS (MPR); and a suspended PMOS (MPM) coupled to drain of the PMOS (MPL), the Vm node being coupled to a Va node between drain of the suspend PMOS (MPM) and drain of the NMOS (MNL).

備註

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