採用應變閘極工程與鐵電負電容介電質之動態隨機記憶體及其製造方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

105137313

專利證號

I 611515

專利獲證名稱

採用應變閘極工程與鐵電負電容介電質之動態隨機記憶體及其製造方法

專利所屬機關 (申請機關)

國立臺灣師範大學

獲證日期

2018/01/11

技術說明

本發明揭露一種動態隨機記憶體及其製造方法。動態隨機記憶體之儲存元包含鰭狀式電晶體及電容。鰭狀式電晶體之閘極由具有應力之應變效果的氮化或碳化金屬構成。鰭狀式電晶體之閘極介電質及/或電容之介電質由具有負電容特性之鐵電材料構成。透過應變閘極工程之應用，本發明可達到下列功效：(1)增強介電質之鐵電特性，藉以提升鰭狀式電晶體之操作速度及耐久性；(2)增強鐵電負電容效應，藉以改善鰭狀式電晶體之次臨界擺幅，致使鰭狀式電晶體之切換耗能及關閉狀態漏電流降低，以有效提升電容的電荷保存能力並改善動態隨機記憶體之操作特性。 A dynamic random access memory (DRAM) and a manufacturing method thereof are disclosed. A storage cell of the DRAM includes a FINFET and a capacitor. A gate of the FINFET is formed by a metal nitride or a carbonized metal having the effect of stress-induced strain. A gate dielectric of the FINFET and/or a dielectric of the capacitor can be formed by a ferroelectric material having negative capacitance characteristics. A strained-gate engineering is used in the invention achieve effects of (1) increasing ferro-electricity of the dielectric to enhance the operation speed and endurance of the FINFET; and (2) enhancing the ferro negative capacitance effect to improve the sub-threshold swing of the FINFET, so that the switching power and the off-current of the FINFET can be reduced and the charge retention capability of capacitor can be effectively enhanced to improve the operation characteristics of the DRAM.

備註

連絡單位 (專責單位/部門名稱)

產學合作組

連絡電話

77341329

網址