在訊號傳導時降低介入損耗的導線結構及其方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

110111538

專利證號

I 762262

專利獲證名稱

在訊號傳導時降低介入損耗的導線結構及其方法

專利所屬機關 (申請機關)

元智大學

獲證日期

2022/04/21

技術說明

一種在訊號傳導時優化介入損耗的導線結構及其方法，導線透過化學蝕刻製程於基板上形成，導線與基板接觸處藉由側蝕效應於導線左右兩側分別形成側蝕區域，導線與基板之間於側蝕區域形成側蝕角，裸露於側蝕區域的基板長度為側蝕長度，透過控制側蝕角的角度進而控制側蝕長度使導線在指定的傳導頻率以優化導線的介入損耗，藉此可以達成控制側蝕角進而控制側蝕長度以優化導線的介入損耗的技術功效。 A wire structure for optimized insertion loss during signal transmission and a method thereof are provided. Wire is formed on substrate by chemical etching process. Side etching area is formed on the left and right sides of wire at contact of wire and substrate. Side etching angle is formed in side etching area between wire and substrate. Exposed length of substrate in side etching area is side etching length. Angle of side etching angle is controlled and then side etching length is controlled to optimize insertion loss of wire at specified transmission frequency. Therefore, the efficiency of controlled side etching angle and then controlled side etching length to optimize insertion loss of wire may be achieved.

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