具有奈米孔洞之陽極氧化鋁模板之製造方法Method for making anodic aluminum oxide film having nanopore

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

098123108

專利證號

I 444507

專利獲證名稱

具有奈米孔洞之陽極氧化鋁模板之製造方法Method for making anodic aluminum oxide film having nanopore

專利所屬機關 (申請機關)

國立成功大學

獲證日期

2014/07/11

技術說明

多數的多孔性鋁或陽極氧化鋁模板都需要在低溫的環境中 (2~8 ℃) ◦C，以高純度的鋁箔(99.999%)進行定電位製備，以防止室溫中產生太過迅速的電化學反應。我們提出一種以低純度鋁在室溫中(20~40 ℃)結合正脈衝電壓與正負脈衝電壓的兩階段氧化製程技術，氧化鋁的結構與表面形貌受到脈衝週期與電壓形式的影響相當深遠。最佳化的製程參數即以供給正負脈衝電壓作為第一次陽極氧化，而正負脈衝電壓作為第二次陽極氧化，因為第一次陽極氧化所產生的新細小孔洞可作為極佳的預定位定義圖形，供給第二次陽極氧化生成規則排列的奈米孔洞之用。陣列奈米孔洞的直徑約為30–60 nm。 Most porous anodic alumina (PAA) or anodic aluminum oxide (AAO) films are fabricated using the potentiostatic method from high-purity (99.999%) aluminum films at a low temperature of approximately (2~8 ℃) to avoid dissolution effects at room temperature (RT). We have demonstrated the fabrication of PAA film from commercial purity (99%) aluminum at RT (20~40 ℃) using a hybrid pulse technique which combines pulse reverse and pulse voltages for the two-step anodization. The structure and morphology of the anodic films were greatly influenced by the duration of anodization and the type of voltage. The best result was obtained by first applying pulse reverse voltage and then pulse voltage. The first pulse reverse anodization step was used to form new small cells and pre-texture concave aluminum as a self-assembled mask while the second pulse anodization step was for the resulting PAA film. The diameter of the nanopores in the arrays could reach 30–60 nm.

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