半導體晶片探棒及使用半導體晶片探棒進行傳導形式電磁放射之量測裝置

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

102111740

專利證號

I 472773

專利獲證名稱

半導體晶片探棒及使用半導體晶片探棒進行傳導形式電磁放射之量測裝置

專利所屬機關 (申請機關)

財團法人國家實驗研究院

獲證日期

2015/02/11

技術說明

The present invention discloses a semiconductor chip probe for measuring conducted electromagnetic emission (EME) of a bare die and a conducted EME measurement apparatus with the semiconductor chip probe. The semiconductor chip probe comprises a substrate, a dielectric layer, an impedance unit, a measuring unit and a connection unit. The measurement apparatus comprises a semiconductor chip probe, a high frequency probe, a signal cable and a test receiver. The integrated passive component network designed and embedded inside the semiconductor chip probe forms the 1Ω or 150Ω impedance network. And the semiconductor chip probe is able to directly couple the EME conducted current or voltage from the test pin of the flipped chip under test to the test receiver for measurement.

備註

本部(收文號1080079312)同意該院108年12月11日國研授半導體企院字第1081301803號通報專利終止維護案。

連絡單位 (專責單位/部門名稱)

國研院技術移轉中心

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02-66300686

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