將光陽極的光敏染料含浸於一導電基材的方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

099113121

專利證號

I 406424

專利獲證名稱

將光陽極的光敏染料含浸於一導電基材的方法

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2013/08/21

技術說明

本研究在染料敏化太陽能電池(Dye Sensitized Solar Cell, DSSC)製造過程的染料含浸階段，應用壓力擺盪含浸(Pressure Swing Impregnation)法，提昇釕系染料D719(cis-bis(isothiocyanato)bis(2,2’-bipyridyl-4,4-dicarboxylato)ruthenium(II) bis-tetrabutylammonium)的含浸效果。應用壓力擺盪含浸法將高壓二氧化碳注入溶有光敏染料的溶液中，使該溶液形成二氧化碳膨脹性流體，降低該溶液之黏度以利於光敏染料質傳擴散，接著再注入更高壓的二氧化碳，利用反溶劑效應將光敏染料自溶液中析出並沈積於陽極孔洞內，實驗結果顯示以壓力擺盪含浸法製備的陽極與傳統的濕式含浸(Wet Impregnation)製備的相比，含浸時間最短僅需原來的二分之一，光電轉換效率提昇比例最高更可達到百分之十以上。 The present invention provides a process for preparing a photoanode of a dye-sensitized solar cell (DSSC) by pressure swing impregnation, which includes impregnating a metal oxide layer on a conductive substrate in a dye solution in an autoclave; introducing an inert gas into the autoclave to maintain a first pressure therein for a period of time, wherein the first pressure being lower than the critical pressure of the inert gas and the solution is expanded by the inert gas; further pressurizing the autoclave with the inert gas and maintaining at a second pressure higher than the first pressure for a period of time, wherein the inert gas becomes near-critical or supercritical fluid and dissolves more in the solution, creating an anti-solvent effect, so that the dye further deposits onto the metal oxide layer due to the anti-solvent effect.

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