RADIO FREQUENCY INTEGRATED CIRCUIT HAVING RELATIVELY SMAILL CIRCUIT AREA AND METHOD OF FABRICATING THE SAME

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

16/940,093

專利證號

US 11,257,845 B2

專利獲證名稱

RADIO FREQUENCY INTEGRATED CIRCUIT HAVING RELATIVELY SMAILL CIRCUIT AREA AND METHOD OF FABRICATING THE SAME

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2022/02/22

技術說明

一種射頻積體電路，包括：一CMOS矽基板，其內埋置有至少一CMOS元件；以及至少一薄膜電晶體，其形成在該CMOS矽基板上並用作一射頻元件。該薄膜電晶體包括一T形閘極電極。一種用於製造該射頻積體電路的方法亦被提出。 A radio frequency integrated circuit includes a silicon CMOS substrate with at least one CMOS device buried there in, and at least one thin film transistor formed on the silicon CMOS substrate and functioning as a radio frequency device. The thin film transistor includes a T-shaped gate electrode. A method for the fabricating a radio frequency integrated circuit is also disclosed.

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