薄位障之高速通訊可見光發光二極體

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

105118844

專利證號

I 589024

專利獲證名稱

薄位障之高速通訊可見光發光二極體

專利所屬機關 (申請機關)

國立中央大學

獲證日期

2017/06/21

技術說明

一種薄位障之高速通訊可見光發光二極體，該薄位障係指結構中阻障層厚度為井層厚度之兩倍以內者。上述發光二極體中心波長為490～500nm，使用圖案化藍寶石為基板作為塑膠光纖通訊之光源，可增加外部量子效率與輸出功率於此極小尺寸之高速發光二極體，達到高速、高功率性能。此外，藉由減少主動層中阻障層之厚度，將其厚度降低至5 nm，可得到於所有高速可見光發光二極體中高達1GHz之極高速之電光轉換頻寬，此記錄為世界之最，並為習用（例如：高速紅光RCLED及GaN基綠光LED/雷射二極體）之兩倍快，且僅需一個非常小之直流偏壓電流（90mA）即可達成。 Greatly reducing the thickness of the barrier layers in the multiple-quantum-well (MQW) region of III-nitride based cyan light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSS) from 17 to 5 nm, leads to simultaneous improvement in the modulation speed, differential quantum efficiency, and maximum output power compared to reference LEDs under room-temperature and 110 ℃ operations. A moderate output power (1.7mW) with a record-high 3-dB electrical-to-optical (E-O) bandwidth (1GHz) among all reported visible LEDs is demonstrated by the use of our novel device structure. Compared with that of the fastest previously reported visible LEDs, our device exhibits an over two-fold enhancement in the E-O bandwidth (~1 vs. ~0.5 GHz), which can be attributed to a more uniform distribution of injected carriers inside the MQW region and the aggressive downscaling of the total active layer thickness which leads to a shortening of the spontaneous recombination time.

備註

本部(收文號1090071728)同意該校109年11月30日中大研產字第1091401301號函申請終止維護專利(中央)

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