三元晶圓鍵合之方法及其結構

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

103113357

專利證號

I 529826

專利獲證名稱

三元晶圓鍵合之方法及其結構

專利所屬機關 (申請機關)

國立中央大學

獲證日期

2016/04/11

技術說明

晶圓鍵合(Wafer bonding)技術在半導體或發光二極體(LED)領域為一相當常見的製程程序。此手法通常運用於將兩異材接合在一起，分別在兩異材的接合面上蒸鍍鍵合金屬層(bonding layers)，並對此施予一壓力，升溫到適當的溫度使金屬層反應產生鍵結，將兩異材緊密貼合。因為升溫到降溫的過程中，兩異材的熱膨脹係數不匹配(CTE mismatch)會產生一熱應力，此應力過大會造成翹曲，更甚者則是破裂，唯有降低鍵結溫度方可有效改善此效應。Au-Ag-Si三元鍵結系統，運用Ag與Au組合層可與Si晶圓進行低溫晶圓鍵合，其鍵結溫度為250 oC。此系統可直接使用於Si基板上。 This technic is used to joint two different substrates. Evaporating the metallic bonding layers on the joint faces of the substrates. Then, Giving a pressure to that and rising to appropriate temperature makes the metal react and produces bonding to each other. Finally, two substrates can bond together. Because of the process of the rising and cooling temperature, the CTE mismatch between the substrates induces a thermal stress. If it is too larger, the bonded substrates may bend, furthermore, the substrates may crack. The only one thing is decreasing the bonding temperature to avoid the effect mentioned before. The bonding temperature of the Au-Ag-Si tri-bonding system is 250 oC. Through Ag and Au bilayers can proceed the low temperature wafer bonding with Si wafer, which bonding temperature is 250 oC. And another advantage is this system can directly use on Si wafer which is wildly used in the region of the semi-conductor.

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本部(收文號1090071728)同意該校109年11月30日中大研產字第1091401301號函申請終止維護專利(中央)

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