於銅銦鎵硒製備三維結構的方法METHOD OF FABRICATING 3D STRUCTURE ON CIGS MATERIAL

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/910,516

專利證號

US 8,815,633 B1

專利獲證名稱

於銅銦鎵硒製備三維結構的方法METHOD OF FABRICATING 3D STRUCTURE ON CIGS MATERIAL

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2014/08/26

技術說明

一種於銅銦鎵硒製備三維結構的方法，首先，準備一銅銦鎵硒基材，並於該銅銦鎵硒基材上定義為互補的兩區域；接著，提供一模具，並使該模具吸收一對該銅銦鎵硒基材具腐蝕性而對該模具不具腐蝕性的蝕刻液；最後，將該模具對應於該兩區域上，令該蝕刻液流出該模具而接觸該兩區域以進行蝕刻，使得該兩區域之間形成一高度落差，而於該銅銦鎵硒基材上形成一三維結構。據此，本發明不需昂貴的設備即可快速的於該銅銦鎵硒基材上大面積製作出該三維結構 Method for producing a three-dimensional structure on a copper indium gallium selenide compound, comprises steps: preparing a copper indium gallium selenide substrate(CIGS substrate) and defining two regions on the CIGS substrate, wherein the two regions are complementary to each other; providing a mold which absorbs an etching solution, wherein the etching solution is corrosive to the CIGS substrate but not corrosive to the mold; and placing the mold to a position corresponding to the regions such that the etching solution flows out of the mold and contacts with the regions for creating a height difference between the regions on the CIGS substrate to form a three-dimensional structure. Accordingly, the method could produce a large area of the three-dimensional structure on the CIGS substrate quickly without expensive equipment.

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