QUANTUM DOT STRUCTURE WITH EXCELLENT STABILITY AND METHOD FOR MAKING THE SAME

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

17/382,196

專利證號

US 11,685,861

專利獲證名稱

QUANTUM DOT STRUCTURE WITH EXCELLENT STABILITY AND METHOD FOR MAKING THE SAME

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2023/06/27

技術說明

一種穩定性佳的量子點，其包括一由M1C1之一第一化學式所構成的M1C1核，及複數由M2C2之一第二化學式所構成的M2C2內殼。M1C1核包括一具有一包括複數晶面且皆為非氧化晶面的第一族群晶面，與一包括複數晶面皆為氧化晶面的第二族群晶面的表面。各M2C2內殼分別對應成長在M1C1核的第一族群晶面的各晶面上。M1是至少一選自由下列所構成之群組的元素：Al、Ga，及In，且C1是至少一選自由下列所構成之群組的元素：P，及As。M2是至少一選自由下列所構成之群組的元素：Zn、Pb、Ag、Cu、Mn、Cd，及Mg，且C2是至少一選自由下列所構成之群組的元素：S、Se、O、F、Cl、Br、I，及Te。 This invention provides a quantum dot with excellent stability which comprises a M1C1core made of a first formula of M1C1, and a plurality of M2C2inner shells made of a second formula of M2C2. Said M1C1core includes a surface having a first family of crystallographic planes with a plurality of crystallographic planes and all non-oxidized crystal planes, and a second family of crystallographic planes with a plurality of crystallographic planes and all oxidized crystal planes. Each of said M2C2inner shells growth on a corresponding one of each of said crystallographic planes of said first family of crystallographic planes of said core. M1 is at least one of element selected form the group consisting of Al, Ga, and In, and C1 is at least one of element selected form the group consisting of P, and As. M2 is at least one of element selected form the group consisting of Zn, Pb, Ag, Cu, Mn, Cd, and Mg, and C2 is at least one of element selected form the group consisting of S, Se, O, F, Cl, Br, I, and Te.

備註

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智財技轉組

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