單晶矽基板碗狀凹槽結構之製造方法及具有碗狀凹槽結構之單晶矽基板METHOD FOR MANUFACTURING BOWL SHAPE SURFACE STRUCTURES OF SINGLE-CRYSTALLINE SILICON SUBSTRATES AND A SINGLE-CRYSTALLINE SILICON SUBSTRATE WITH BOWL SHAPE SURFACE STRUCTURES

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

102118843

專利證號

I 538043

專利獲證名稱

單晶矽基板碗狀凹槽結構之製造方法及具有碗狀凹槽結構之單晶矽基板METHOD FOR MANUFACTURING BOWL SHAPE SURFACE STRUCTURES OF SINGLE-CRYSTALLINE SILICON SUBSTRATES AND A SINGLE-CRYSTALLINE SILICON SUBSTRATE WITH BOWL SHAPE SURFACE STRUCTURES

專利所屬機關 (申請機關)

國立中央大學

獲證日期

2016/06/11

技術說明

在此發明中，我們提出一簡單、低成本且快速有效之新製作方法，結合噴砂法及化學溶液氧化蝕刻技術，在矽單晶基板表面上製備新穎抗反射表面粗糙化結構。此技術以光伏電池所用之單晶矽晶片作為基板，首先利用噴砂法在矽單晶基板表面轟擊出大小不一之微小坑洞，經清洗後將此表面粗糙之矽單晶基板以濕式蝕刻法在混合酸溶液中進行等向性氧化蝕刻，利用調變蝕刻時間，即可在矽單晶基材表面製備出具優異抗反射效果之碗狀表面粗糙化結構。過程中完全不需額外在矽單晶基材上再鍍製抗反射披覆層，可大幅促進其製作效率。此新穎方法將可有效快速地在各式不同晶面指向之單晶矽基晶片基板上製備出具優異抗反射效果之表面粗糙化結構，而無需使用複雜的半導體微影技術。 In this invention, we propose a facile, low-cost and efficient method to produce textured surfaces on single-crystalline silicon substrates, which is based on the sandblasting treatment combined with a wet etching technique. After appropriate sandblasting and wet etching treatments, the optical reflectance of the textured silicon substrates can be significantly reduced. By adjusting the etching time, the average reflectance measured in the wavelength range of 400 to 800 nm for the bowl-like textured Si substrates can be gradually decreased to less than 2 %. No additional antireflection coatings are needed for this method. The bowl-like antireflection Si structures proposed in this invention has a great potential for application in high-efficiency Si-based solar cells.

備註

本會(收文號1120010838)同意該校112年2月21日中大研產字第1121400216號函申請終止維護專利(國立中央大學)

連絡單位 (專責單位/部門名稱)

智權技轉組

連絡電話

03-4227151轉27076

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