陣列式晶片的切割方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

110104045

專利證號

I 771893

專利獲證名稱

陣列式晶片的切割方法

專利所屬機關 (申請機關)

國立陽明交通大學

獲證日期

2022/07/21

技術說明

一種陣列式晶片的切割方法，包括：(a)於一配置於一基板之一正面上的陣列式晶片上形成一遮罩層，該遮罩層具有複數彼此交叉設置的通道，及複數由該等通所侷限而成並接觸各自所對應之晶片之一元件表面的覆蓋區；(b)對裸露於該等覆蓋區外的基板正面僅施予一乾式蝕刻，以朝該基板內移除部分基板從而在該基板內形成複數彼此交叉且對應於該等通道的溝渠；(c)於該步驟(b)後，於各覆蓋區之一相反於該基板正面的表面黏貼一載板；(d)於該步驟(c)後，自相反於該基板正面的一背面移除該基板直到裸露出該基板之各溝渠為止；及(e)於該步驟(d)後，自該遮罩層移除該載板。 This invention provides a method for cutting an array of chips which comprises the following steps of (a) disposing a mask layer on an array of chips arranged on a front surface of a substrate, the mask layer has a plurality of channels crossing each other and a plurality of covering portions confined from the channels and contacting an element surface of the corresponding one of chip; (b) subjecting a dry etching to the front surface of the substrate that is exposed from the covering portions, such that removes part of the substrate inwardly and forms a plurality of trenches crossing each other and corresponding to the channels in the substrate; (c) after the step of (b), adhering a carrier plate on a surface of the covering portions, the surface of the covering portions is oppose to the front surface of the substrate; (d) after the step of (c), removing the substrate from a back surface of the substrate oppose to the front surface of the substrate until exposed the trenches of the substrate; and (e) after the step of (d), removing the carrier plate from the mask layer.