Synthesis and applications of soluble pentacene precursors and related compounds

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/539,520

專利證號

US 9,034,439 B2

專利獲證名稱

Synthesis and applications of soluble pentacene precursors and related compounds

專利所屬機關 (申請機關)

中央研究院

獲證日期

2015/05/19

技術說明

稠五苯(pentacene)具有很高的電荷遷移率(charge mobility)，為當前最佳之p-type有機薄膜電晶體(OTFT)中的柵極(gate electrode)材料。然而稠五苯在對有機溶劑的低溶解度，使他的使用受限。有機薄膜電晶體是光電產業未來發展的必然趨勢，對關鍵材料的掌控，其影響將巨大而深遠。故國際大廠如菲利浦及IBM公司皆早已著手研發解決方法(詳見目前已發表之專利)，但成效不彰。本法合成多種可溶性的稠五苯前驅物，得以用旋轉塗佈法製作大面積的薄膜，再經過加熱或是照光的程序後，脫去一些高揮發性的小分子後(如一氧化碳、二氧化碳，或乙烯衍生物)，可形生高純度的稠五苯薄膜。初步測試的結果，顯示此類薄膜具備極佳之TFT（thin-film transistor）特性，為具有實用價值的有機電晶體材料。此項發明不僅優於菲利浦及IBM發表之化合物，並開闢另一蹊徑，可躍過兩大公司所涵蓋之專利範圍。 Pentacene is the best organic semiconducting material to date, which can be used as a gate material in p-type organic thin film transistors (OTFT) due to its high electron mobility. However, its low solubility in most organic solvents limits its usage of solution processes for preparing large size films. In this work we describe the synthesis of a series of pentacene precursors, which are soluble in organic solvents, therefore can be spin-coated into large films. After drying, the films are treated either with heating or with photo-irradiation to initiate a dissociation reaction for the production of pure pentacene. The film thus prepared is feasible for the fabrication of OTFT devices. Our preliminary results showed that the devices exhibit typical FET characteristics with excellent performance. The materials described in this work provide an alternate and superior choice of materials, which can surpass the coverage of earlier patents.

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