共面波導接地面缺陷結構

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

094101591

專利證號

I 254483

專利獲證名稱

共面波導接地面缺陷結構

專利所屬機關 (申請機關)

國立彰化師範大學

獲證日期

2006/05/01

技術說明

一種共面波導接地面缺陷結構，其係由二接地面與設置於兩接地面之間的一導線組成共面波導 結構，且各接地面與導線之間分別具有一間隙，而各接地面對稱設有一以上之缺陷結構，各缺 陷結構包含有二以上併列之導溝，且其中之一導溝係與間隙相通，並於各導溝之間以一連接槽 相連通，藉此缺陷結構之設計使共面波導結構具有自身共振特性，並形成多數電容、電感並聯 之等效電路，使得在相同特徵阻抗之前提下能有效縮減缺陷結構之面積，並且獲得所需之通－ 禁帶特性、洩漏波特性以及慢波特性。 The present invention provides a defected ground structure for coplanar waveguides. Each ground plane in the structure for the coplanar waveguides is symmetrical to the other, and has at least one defected structure. More, each defected structure includes at least two parallel guide channels. One of the guide channels is connected with the gap of the coplanar waveguide, and each guide channel is connected with other through a connection channel. Therefore, the structure for coplanar waveguides itself has a resonant characteristic. In the same impedance, the present invention can efficiently reduce the area of the defected structure. Further, it can obtain a passband-stopband characteristic, a leaky-wave characteristic, and a slow-wave characteristic.

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04-7232105轉1858

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