具有氮化鎵層的多層結構基板及其製法

專利類型

發明

專利國別 (專利申請國家)

日本

專利申請案號

特願 2010-284369

專利證號

特許 5449121

專利獲證名稱

具有氮化鎵層的多層結構基板及其製法

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2014/01/10

技術說明

本發明提出一種成長厚的氮化鋁高速電子遷移率電晶體結構於圖樣化矽基板之方法。藉由在矽基板上利用氮化矽(SixNy)製作網狀的方格，將定義好的圖樣化矽基板進行磊晶成長，並搭配高溫/低溫/高溫的AlN與AlGaN緩衝層的設計，最終在成長AlGaN/2-μm GaN的HEMT磊晶結構，透過圖樣化矽基板與緩衝層的設計，釋放GaN與矽基板間的應力並提升磊晶層的品質，使得厚的磊晶層成長完後不至於出現裂痕。此技術有助於成長2-μm以上的無裂痕高品質的GaN磊晶層，進一步提供AlGaN/GaN HEMT在電力電子(power electronics)元件上的應用。 In this invention, a thick GaN HEMT structure was grown on the patterned Si substrate. The patterned Si substrate was fabricated by depositing SixNy and defining the open window region under lithography process. During the epitaxy growth, the high temperature/low temperature/high temperature AlN and AlGaN buffer layers were grown on the patterned Si substrate. Finally, the AlGaN/2-μm GaN HEMT structure was grown above the optimized buffer layers. The thick, high quality and crack-free epitaxial layer was obtained by using the patterned Si substrate and the optimized buffer layers because the stress in the GaN film was released and the crystal quality was improved. The invention can be used for growing 2-μm GaN layer without crack, and furthermore the AlGaN/GaN HEMT structure can be widely applied in power electronic applications.

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