METHOD FOR INHIBITING GROWTH OF INTERMETALLIC COMPOUNDS

專利類型

發明

專利國別 (專利申請國家)

南韓

專利申請案號

10-2012-0081954

專利證號

10-1424095

專利獲證名稱

METHOD FOR INHIBITING GROWTH OF INTERMETALLIC COMPOUNDS

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2014/07/22

技術說明

本發明係有關於一種用於減緩介金屬化合物成長之方法，步驟包含：(i)製備一基板元件，包括在一基板上電鍍至少一金屬墊層，接著在該金屬墊層上電鍍至少一很薄的一薄銲料，進行適當的熱處理製程；(ii)在該基板元件上再鍍上適當厚度的銲料；其中，該薄銲料經過適當的熱處理後，會與金屬墊之金屬反應形成一薄的介金屬化合物，因此可以在之後的迴銲製程抑制介金屬化合物的生成速率之效果，藉以減緩微小接點銲料與金屬墊上的金屬反應變成介金屬化合物。一旦介金屬化合物成長速率能被減緩，錫晶鬚(Sn whisker)的成長也可以被抑制。 The present invention relates to a method for inhibiting growth of intermetallic compounds, comprising the steps of: (i) preparing a substrate element including a substrate on which at least one layer of metal pad is deposited, wherein at least one layer of solder having a thin thickness is deposited onto the layer of metal pad, and then carry out reflowing process; and (ii) further depositing a layer of solder with an appropriate thickness on the substrate element, characterized in that a thin intermetallic compound is formed by the reaction of the solder having a thin thickness and the metal in the metallic pad after appropriate heat treatment of the thin solder. In the present invention, the formation of thin intermetallic compound is able to slow down the growth of the intermetallic compound and to prevent the transformation of the intermetallic compounds. Once the growth of the intermetallic compounds can be inhibited, the growth of Sn whiskers can also be inhibited.

備註

本部(收文號1100065219)同意該校110年10月27日陽明交大研產學字第1100036963號函申請終止維護專利(陽明交大)

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