非揮發性三元內容定址記憶體單元NON-VOLATILE TERNARY CONTENT-ADDRESSABLE MEMORY WITH RESISTIVE MEMORY DEVICE

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

14/294,174

專利證號

US 9,312,006 B2

專利獲證名稱

非揮發性三元內容定址記憶體單元NON-VOLATILE TERNARY CONTENT-ADDRESSABLE MEMORY WITH RESISTIVE MEMORY DEVICE

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2016/04/12

技術說明

非揮發性三元內容定址記憶體單元[ To address the above shortcomings, a non-volatile ternary content-addressable memory 5T2R cell with resistive voltage-divider search is proposed. One feature of the invention is proposed a non-volatile ternary content-addressable memory with 5T2R cell structure, comprising five transistors including a pair of search transistors with a first search transistor and a second search transistor, a read transistor, a write transistor and a match line transistor, wherein a match line is coupled to the match line transistor; and a pair of variable resistances have a first variable resistance and a second variable resistance. A second terminal of the pair of variable resistances is coupled to the read transistor, the write transistor and the match line transistor. A first terminal of the first variable resistance is coupled to the first search transistor, and wherein a first terminal of the second variable resistance is coupled to the second search transistor. To address the above shortcomings, a non-volatile ternary content-addressable memory 5T2R cell with resistive voltage-divider search is proposed. One feature of the invention is proposed a non-volatile ternary content-addressable memory with 5T2R cell structure, comprising five transistors including a pair of search transistors with a first search transistor and a second search transistor, a read transistor, a write transistor and a match line transistor, wherein a match line is coupled to the match line transistor; and a pair of variable resistances have a first variable resistance and a second variable resistance. A second terminal of the pair of variable resistances is coupled to the read transistor, the write transistor and the match line transistor. A first terminal of the first variable resistance is coupled to the first search transistor, and wherein a first terminal of the second variable resistance is coupled to the second search transistor.

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