在絕緣基板上製備石墨烯薄膜的方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

110106103

專利證號

I 762205

專利獲證名稱

在絕緣基板上製備石墨烯薄膜的方法

專利所屬機關 (申請機關)

中原大學

獲證日期

2022/04/21

技術說明

本發明提供一種在絕緣基板上製備石墨烯薄膜的方法，包括以下步驟。在大氣環境下，利用銅箔包覆並緊密貼合絕緣基板，再放入化學氣相沉積爐管中。然後，以第一流量向化學氣相沉積爐管通入氬氣並升溫，升溫至目標溫度時轉換氣體為第二流量的氫氣，進行熱退火。接下來，在絕緣基板上進行石墨烯成長 步驟，通入氬氣和氫氣的混合氣體，並加熱樟腦。完成石墨烯成長步驟之後，進行降溫。 A method for preparing a graphene film on an insulating substrate is provided, including the following steps. In the atmospheric environment, the insulating substrate is wrapped with and closely attached to a copper foil, and placed in a chemical vapor deposition furnace tube. After that, argon gas is introduced into the chemical vapor deposition furnace tube at a first flow rate and a temperature of the chemical vapor deposition furnace tube is raised. When the temperature is raised to a target temperature, the argon gas is converted to a second flow rate of hydrogen, and thermal annealing is performed. Next, a graphene growth step is performed on the insulating substrate, and a mixed gas of argon and hydrogen is introduced, and camphor is heated. After the graphene growth step is completed, the temperature is lowered.

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