以紙做為基板並以蠶絲做為介電材料之有機薄膜電晶體及其製作方法OTFT USING PAPER AS SUBSTRATE AND SILK PROTEIN AS DIELECTRIC MATERIAL AND METHOD FOR MANUFACTURING THE SAME

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

099117223

專利證號

I 418072

專利獲證名稱

以紙做為基板並以蠶絲做為介電材料之有機薄膜電晶體及其製作方法OTFT USING PAPER AS SUBSTRATE AND SILK PROTEIN AS DIELECTRIC MATERIAL AND METHOD FOR MANUFACTURING THE SAME

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2013/12/01

技術說明

本發明係有關於一種以紙做為基板並以蠶絲蛋白做為介電材料之有機薄膜電晶體裝置及其製作方法。其中，有機薄膜電晶體裝置係包括：一紙基板；一閘極，係配置於紙基板上；一閘極介電層，係配置於紙基板上且覆蓋閘極，其中閘極介電層之材料係包含一蠶絲蛋白；一有機半導體層；以及一源極、以及一汲極，其中有機半導體層、源極、以及汲極係配置於閘極介電層上方。以紙為基板並以蠶絲蛋白為介電層材料的五環素有機薄膜電晶體的特性，其五環素載子移動率約 14 cm2/V-sec。 An organic thin film transistor (OTFT) using paper as a substrate and silk protein as an insulating material and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a paper substrate; a gate disposed on the paper substrate; a gate insulating layer containing silk protein, which is disposed on the paper substrate and covers the gate; an organic semiconductor layer; and a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the gate insulating layer. The field effect mobility of the OTFT using paper as substrate and silk protein as dielectric material is approximately 14 cm2/Vs.

備註

本部(收文號1050048245)同意該校105年7月11日清智財字第1059003575號函終止維護專利19件(清華)

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