導電橋式記憶體元件的製作方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

110109341

專利證號

I 764624

專利獲證名稱

導電橋式記憶體元件的製作方法

專利所屬機關 (申請機關)

國立陽明交通大學

獲證日期

2022/05/11

技術說明

一種導電橋式記憶體元件的製作方法，包含下電極形成步驟、切換層形成步驟、表面處理步驟、阻擋層形成步驟，及上電極形成步驟，而依序以濺鍍方式於一基板上形成一下電極層、一由氧化銦鎢鋅構成的切換層、一阻擋層，及一上電極，本案於形成該切換層後，在該切換層的表面進行該表面處理步驟，通過氧電漿處理的方式減少其表面的氧空缺數量，以避免後續施加電壓於元件時，發生電流過衝的情況，進而增加該導電橋式記憶體元件的耐久性，此外，該切換層在阻態轉換過程中的阻態分佈均勻，還能減低在運作時，元件的參數特性浮動的情況，以增加元件的穩定性。 A manufacturing method of a conductive bridge memory device includes a bottom electrode forming step, a switching layer forming step, a surface treatment step, a blocking layer forming step, and an upper electrode forming steps. The manufacturing method sequentially forms a bottom electrode layer, a switching layer made of IWZO, a blocking layer, and an upper electrode on a substrate. In this invention, after the switching layer is formed, the surface treatment step is performed to reduce the number of oxygen vacancies on the surface of the switching layer by an oxygen plasma treatment. It prevents a current overshoot when voltage is subsequently applied to the conductive bridge memory device, thereby improving the durability of the conductive bridge memory device. In addition, the resistance state of the switching layer is uniform during the resistance state conversion process. It also reduces the fluctuation of the sensitivity of parameters of the device, so as to increase the stability of the conductive bridge memory device.