CMOS-BASED PROCESS FOR MANUFACTURING A SEMICONDUCTOR GAS SENSOR

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

15/398,025

專利證號

US 9,746,437 B2

專利獲證名稱

CMOS-BASED PROCESS FOR MANUFACTURING A SEMICONDUCTOR GAS SENSOR

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2017/08/29

技術說明

CMOS氣體感測元件是在矽晶元的正面及背面加工製作完成，其中矽晶元正面由絕熱懸浮薄膜、微加熱器、感測電極與迴授電路所構成。在製作微加熱器與感測電極時，可同時製作驅動電路、訊號讀取電路與溫度控制電路，且不需額外光罩與製程步驟。微加熱器與感測電極所使用之材料為氮化鉭與多晶矽，其可承受高溫操作環境(＞400 ˚C)，並且為CMOS製程中常用的標準材料。在矽晶元背面，於Post-CMOS process中利用乾式蝕刻或濕式蝕刻方式形成氣體感測區與釋放絕熱懸浮薄膜。最後，使用乾式蝕刻方式移除多晶矽上方絕緣層，並沈積氣體感測薄膜完成CMOS氣體感測元件製作流程。 CMOS gas sensing device is fabricated on the front side and the back side of a silicon substrate. In the front side of silicon substrate that includes a thermal insulating membrane, micro-heater, sensing electrode and feedback circuitry. The feedback circuitry included the driving circuit, readout circuit and thermal control circuit can be formed during the process of micro-heater and sensing electrode, and they do not require extra masks or processing. The material of micro-heater and sensing electrode is using tantalum nitride and polysilicon respectively. These materials can withstand high temperature environment and compatible with the CMOS process. In the back side of silicon substrate, using dry etching or wet etching method to form the gas sensing area and release the thermal insulating membrane. Finally, the insulating layer on the top surface of polysilicon is removed by using dry etching and then deposited the sensing film to carry out the process of CMOS gas sensing device.

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