帶電探針及其電場量測方法CHARGED PROBE AND ELECTRIC FIELDS MEASUREMENT METHOD THEREOF

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/920,797

專利證號

US 8,726,411

專利獲證名稱

帶電探針及其電場量測方法CHARGED PROBE AND ELECTRIC FIELDS MEASUREMENT METHOD THEREOF

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2014/05/13

技術說明

本發明提供一種帶電探針及其電場量測方法，探針可充電於單一顆黏合於探針針尖的駐極體奈米球以形成帶電荷之探針，並可適用於掃描探針顯微術。探針包含絕緣針頭基座、懸臂樑及單一顆駐極體奈米球。懸臂樑用以支撐絕緣針頭基座，單一顆奈米設置於絕緣針頭基座之磨損平面上。在使用電極接觸法後，單一顆奈米球可儲存有單一電性之固定量電荷，利用虛像法電荷計算公式計算單一電性之固定量電荷。在於探針尖端的駐極體奈米球儲電後，此探針即可於原子力顯微鏡系統上以輕敲法掃描影像或力距離曲線擷取任何物件表面之電場分佈圖。 The present invention provides a charged probe and an electric fields measuring method thereof. The probe can be charged with single electricity on single nano particle attached on the top of probe tip being a charged probe and the probe is applicable for measuring the electric fields of object in the nano scale. The probe comprises an insulating tip base, a cantilever and a single nano-particle. The cantilever is arranged for supporting the insulating tip base and the single nano-particle is configured on the erosion plane. After conducting contact electrification method to charge the electric nano particle, the single nano-particle will be charged with fixed number of single electrical charge. Then, the amount of the fixed number of single electrical charge is calculated by the virtual image charge calculation method. The charged probe can be used to measure the electric fields distribution by tapping mode or curve measurement.

備註

本部(收文號1100002967)同意該院110年1月12日清智財字第1109000186號函申請終止維護專利(國立清華大學)

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