尖端具有微結構之奈米線之製作方法Method for manufacturing nanowires with micro- structure

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

100109143

專利證號

I 448418

專利獲證名稱

尖端具有微結構之奈米線之製作方法Method for manufacturing nanowires with micro- structure

專利所屬機關 (申請機關)

國立成功大學

獲證日期

2014/08/11

技術說明

本發明所揭示以第一階段進行ZnO奈米結構之側向成長或垂直方向成長再以第二階段進行奈米結構尖端塑型技術，不需昂貴之磊晶或長晶設備與製程，不需觸媒，具有製程簡易與成本低廉之優點，於製程上極具創新性。本發明技術可藉由水熱法成長氧化鋅奈米結構並藉由製程條件進行尖端塑型，有助於提升電子場發射特性，降低操作電壓及減輕甚或解除其對環境真空度之依賴；利用本發明方法製所作出具尖端塑型之水平側向排列氧化鋅奈米結構之場發射元件。 The present invention discloses a novel technology using hydro-thermal growth (HTG) method for the fabrication of lateral and vertical ZnO nanotips field emission devices. For demonstration, a patterned seeding layer of aluminum-doped-zinc-oxide (AZO) film or a zinc-oxide (ZnO) film were sputter-deposited on glass substrates to serve as a seed layer for the growth of ZnO nanotips by HTG. Lateral and vertical grown ZnO nanotips with controllable length have been obtained. Good field emission characteristic has been obtained, indicating the practicability of the technologies revealed in the present invention. Because of the close distance between the electrode of the lateral and vertical ZnO nanotips field emission device could reduce the turn-on voltage. These devices are expected to exhibit much better optoelectrical performance than conventional vertical devices.

備註

本部(收文號1060000114)同意該校105年12月30日成大研總字第1054501055號函申請終止維護專利

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