低電壓一次性寫入記憶體及其陣列

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

111115503

專利證號

I 795275

專利獲證名稱

低電壓一次性寫入記憶體及其陣列

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2023/03/01

技術說明

【中文】 本發明提供一種低電壓一次性寫入記憶體，包含第一導電層、第一通孔、第二導電層、選擇電晶體、第二通孔及第三導電層。第一通孔電性連接第一導電層。第二導電層電性連接第一通孔。選擇電晶體電性連接第二導電層。第二通孔電性連接於第二導電層。第三導電層電性連接第二通孔。其中，流經第二通孔之第一電流為流經第一通孔之第二電流與流經選擇電晶體之第三電流之和。藉此，本發明之低電壓一次性寫入記憶體移除習知一次性寫入記憶體中的高電壓輸入/輸出電晶體，僅需透過低電壓驅動低電壓核心電晶體。 【英文】 A low voltage one-time-programmable memory is proposed. The low voltage one-time-programmable memory includes a first conductive layer, a first via, a second conductive layer, a select transistor, a second via and a third conductive layer. The first via is electrically connected to the first conductive layer. The second conductive layer is electrically connected to the first via. The select transistor is electrically connected to the second conductive layer. The second via is electrically connected to the second conductive layer. The third conductive layer is electrically connected to the second via. A first current passed by the second via is a sum of a second current passed by the first via and a third current passed by the select transistor. Therefore, the low voltage one-time-programmable memory of the present disclosure removes the high-voltage input/output transistor of the conventional one-time-programmable memory, and programs the low-voltage core transistor by a low voltage.

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