高效能高穩定電容式介面電路INTEGRATED LOW-NOISE SENSING CIRCUIT WITH EFFICIENT BIAS STABILIZATION

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/675,618

專利證號

US 8,810,262 B2

專利獲證名稱

高效能高穩定電容式介面電路INTEGRATED LOW-NOISE SENSING CIRCUIT WITH EFFICIENT BIAS STABILIZATION

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2014/08/19

技術說明

本技術為針對電容式感應器所設計之訊號接取電路結構,尤其可自動提供電容式感應器與電路之連接點一個穩定的DC偏壓. 此偏壓相當簡單有效,乃利用一個diode-connected, subthreshold NMOSFET連接於放大器的輸出與輸入端而成,此NMOSFET之源極端經過特殊設計,擁有一個主要漏電途徑,因此可以用來穩壓. 此偏壓可提供一穩定回授電阻,也不會減損訊號,並可抵抗製程變異 A sensing circuit for capacitive sensors has been proposed in this work with emphasis on managing noise, sensor offset, and the DC bias at input terminals. The issue of DC bias is particularly addressed and an efficient method is proposed. A sensing circuit for capacitive sensors has been proposed in this work with emphasis on managing noise, sensor offset, and the DC bias at input terminals. The issue of DC bias is particularly addressed and an efficient method is proposed. The DC bias at each input node is specially established by using single diode-connected, subthreshold NMOSFET that has been tailored to have a dominant leakage current path across its source-body junction diode and to connect between the input node and the output node of the front-end amplifier. This biasing scheme efficiently provides a stable input bias voltage and a stable feedback resistance, does not degrade the signal strength, and makes the amplifier resistant to the die-to-die variation as well as the mismatch of the subthreshold NMOSFETs. No extra power and area are needed.

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