具有奈米點之P3HT-TiO2光電電池及其形成方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

098117392

專利證號

I 397201

專利獲證名稱

具有奈米點之P3HT-TiO2光電電池及其形成方法

專利所屬機關 (申請機關)

國立臺灣大學

獲證日期

2013/05/21

技術說明

本發明提供一種具有奈米點之光電電池，其係具有一光電轉換層以及一對電極。該光電轉換層係將入射光轉換成複數個電洞-電子對，該光電轉換層內具有一電洞傳導層以傳遞電洞，該電洞傳導層具有複數個奈米點。該對電極係分別偶接於該光電轉換層之兩側以分別傳導電子與電洞。在另一實施例中，本發明更提供該光電電池之形成方法，其係將奈米點混合於電洞傳導材料所形成的溶液中，再於導電基材形成具有奈米點的電洞傳導層。利用本發明之光電電池可以增加電洞的傳導率進而提升光電電池之效率。 The present invention provides a photovoltaic cell comprising a photovoltaic conversion layer and a pair of electrodes. The photovoltaic conversion layer, being capable of converting light energy into a plurality hole-electron pairs, has a hole transporting layer including a plurality of nanodots doped therein for transporting the holes generated from the photovoltaic effects. The pair of electrodes are coupled to the two sides of the photovoltaic conversion layer respectively for conducting the holes and electrons. In another embodiment, the present invention further provides a method for forming the photovoltaic cell, wherein the nanodots are mixed in the liquid of a hole transporting material and then the hole transporting layer is formed by means of coating the liquid on a electrically conductive substrate. The photovoltaic cell having nanodots of the present invention is capable of enhance the hole mobility so as to improve the photovoltaic efficiency of the photovoltaic cell.

備註

本部(收文號1090002409)同意該校109年1月7日校研發字第1090000702號函申請終止維護專利(臺大)

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