異質接面薄本質層太陽能電池的製造方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

105144314

專利證號

I 610455

專利獲證名稱

異質接面薄本質層太陽能電池的製造方法

專利所屬機關 (申請機關)

國立臺灣師範大學

獲證日期

2018/01/01

技術說明

本發明是有關於一種太陽能電池（solar cell）的製造方法，且特別是有關於一種異質接面薄本質層太陽能電池（Heterojunction with Intrinsic Thin layer solar cell，HIT solar cell）的製造方法。 英文摘要： A Heterojunction with Intrinsic Thin layer (HIT) solar cell includes a crystalline Si substrate, an intrinsic amorphous Si layer, a doped amorphous Si, a transparent conductive layer, and two electrode layer. The intrinsic amorphous Si layer between the doped amorphous Si and the crystalline silicon substrate touches the doped amorphous Si and the crystalline silicon substrate. Each of the intrinsic amorphous Si layer and the doped amorphous Si has the thickness less than 50 nm. The intrinsic amorphous Si layer and the doped amorphous Si are both made by electron beam evaporation. The transparent conductive layer is formed on the doped amorphous Si. The two electrode layers are formed on the transparent conductive layer and the crystalline silicon substrate respectively. The crystalline silicon substrate is arranged between the two electrode layers.

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