薄膜殘留應力之量測方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

099139280

專利證號

I 442036

專利獲證名稱

薄膜殘留應力之量測方法

專利所屬機關 (申請機關)

逢甲大學

獲證日期

2014/06/21

技術說明

提出一種創新的薄膜應力快速檢測方法，可檢測均向性薄膜殘留應力，亦可檢測非均向性(各向異性)薄膜雙軸應力。以改良式Twyman-Green干涉儀為主要硬體架構，並以MATLAB為程式開發平台，整合成一套薄膜應力快速檢測系統。此系統特色在於僅需在鍍膜前和鍍膜後分別擷取單張干涉圖，利用二維快速傅立葉轉換法及Macy相位還原法以求得的鍍膜前後基板的三維輪廓圖並以曲面數值擬合法求得不同方向的曲率半徑，鍍膜後和鍍膜前相減即為薄膜曲率半徑，再利用修正的Stoney公式，可快速測得均向性薄膜殘留應力，無需繁雜的量測步驟。此外，以數值方法計算膜面不同徑向曲率變化之極值，進而測定薄膜平面之主應力方向，再執行坐標旋轉求出非均向應力分佈及雙軸向應力。藉由此系統的特殊設計，得以測定均向薄膜應力及非均向薄膜雙軸應力。 A new method for measuring residual stress in the isotropic and anisotropic thin film is proposed. A modified Twyman-Green interferometer is used to measure the surface topography of thin film. The program is developed based on Matlab software. The present invention is combined with 2D fast Fourier transform (FFT), Macy phase unwrapping algorithm and numerical analysis methods for measuring the radius of curvature of a substrate before and after film deposition. This method can be used to rapidly measure an isotropic stress in thin film. A fringe normalization technique was also used to improve the phase extraction technique efficiently. In addition, the present invention is also applicable to measure the anisotropic stress in thin film derived from the principal stress direction for the maximum value of the curvatures obtained by numerical method. Therefore, the proposed method not only measures isotropic residual stress but also anisotropic stress in a thin film.

備註

連絡單位 (專責單位/部門名稱)

技術授權中心

連絡電話

(04)24517250-6811

網址