據模式製程鄰近效應修正方法與裝置METHOD FOR COMPENSATING EFFECT OF PATTERNING PROCESS AND APPARATUS THEREOF

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/542,819

專利證號

US 8,578,303 B1

專利獲證名稱

據模式製程鄰近效應修正方法與裝置METHOD FOR COMPENSATING EFFECT OF PATTERNING PROCESS AND APPARATUS THEREOF

專利所屬機關 (申請機關)

國立臺灣大學

獲證日期

2013/11/05

技術說明

過去的光學曝光微影模型中，忽略了由電場與磁場引發的三維效應，但隨著積體電路設計的關鍵尺寸微縮至光源波長範圍，此三維效應逐漸產生了重大的影響，於是，隨著考慮此效應的同時，雖提升了模型的準確性，卻也使得光罩修正量的計算變得複雜，需耗費更多的時間、成本。於是，提出了一個新的方法，僅需取得光阻能量分佈的資訊，即可善用回授控制理論中的比例-積分-微分控制器來決定最終光罩上的修正量，既兼顧了模型模擬之準確度，亦可大幅節省計算量。此方法亦可延伸適用於電子束微影與蝕刻方面的鄰近效應修正。 As integrated circuit design dimensions shrink to the deep sub-wavelength regime, previously ignored three-dimensional (3D) mask effects become significant for accurate prediction and correction of proximity effects. Optical proximity correction (OPC) process models consequently must take these effects into account. They challenge the state-of-the-art methodology, which is referred to as a delta-chrome OPC (DCOPC) methodology. This is because each computation of mask perturbation becomes complex and expensive. A non-delta-chrome OPC (non-DCOPC) methodology is proposed to determine the final correction amount using feedback techniques. The correction of segments is accomplished such that the correction process can be efficiently speeded up. The methodology applies to particle beam lithography and etch proximity effects as well.

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