增加氮化鎵系列發光二極體之發光效率的方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

099111445

專利證號

I 418059

專利獲證名稱

增加氮化鎵系列發光二極體之發光效率的方法

專利所屬機關 (申請機關)

國立臺灣海洋大學

獲證日期

2013/12/01

技術說明

一種增加氮化鎵系發光二極體之發光效率的方法，包括先提供一個內部分為高溫區與低溫區的高溫爐，再將一氮化鎵系發光二極體晶片放置到低溫區內，並將銦粒放置到高溫區內。然後，將氨氣(NH3)通入高溫爐的高溫區內與上述銦粒反應形成一氮化銦氣體，並藉由高溫區與低溫區之間的溫差，而使氮化銦氣體沉積在氮化鎵系發光二極體晶片之一出光表面上，進而成長為一氮化銦層。然後，在不移動氮化鎵系發光二極體晶片的情形下，直接在高溫爐內氧化氮化銦層，以於氮化鎵系發光二極體晶片之出光表面上形成一粗化氧化銦薄膜 A method for increasing light emitting efficiency of an GaN-based LED is provided. In this method, a temperature furnace having a high-temperature region and a low-temperature region is provided first, and then an GaN-based LED chip is put into the low-temperature region and a plurality of indium particles is put into the high-temperature region. Thereafter, ammonia gas (NH3) is flowed into the high-temperature region of the temperature furnace for reacting with the indium particles to form a indium nitride gas, and then the indium nitride gas is deposited on a light-emitting surface of the GaN-based LED chip due to the temperature difference between the high-temperature region and the low-temperature region, whereby a InN layer is grown. Afterwards, in the temperature furnace, the InN layer is directly oxidized to form a rough InxOy thin film on the light-emitting surface of the GaN-based LED chip without moving it.

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