具有低表面粗糙度之圖案化透明電極製造方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

103143036

專利證號

I 497533

專利獲證名稱

具有低表面粗糙度之圖案化透明電極製造方法

專利所屬機關 (申請機關)

國立中央大學

獲證日期

2015/08/21

技術說明

本發明為一種將基板圖案化，並以網版印刷法配合精準對位之方式，控制刮刀下壓力及其他製程參數利用表面張力的影響使墨水透過細緻網格，能完全填入基板之凹槽內，最後配合簡易的表面修飾處理(如:導電墨水之修飾或平板熱壓、滾輪熱壓法等方式)，進一步降低表面粗糙度到數十奈米以下，係考慮透明電極之光學特性及電學特性之影響以利後續製程，達到成本低廉且快速製程之目的，並考量商業量產化之可行性。 故本發明適合製作金屬透明電極，並以此透明電極為基底，進一步完成整體光電元件製作如OLED、OPV等。 The present invention is a patterned substrate, and screen printing with precise alignment of the way, under the control of the blade pressure and other process parameters affect the surface tension using the ink through meticulous grid, completely fill in the groove substrate inside, the last with a simple surface modification treatment, to further reduce the surface roughness to tens of nanometer or less, the Department considered the optical properties of the transparent electrodes and electrical affect the characteristics of the process in order to facilitate the follow-up to achieve low cost and fast process of manufacturing purposes, and the feasibility of mass production of commercial considerations. Therefore, the present invention is suitable for the production of metal transparent electrode and the transparent electrode substrate in order to further complete the overall production of optoelectronic components such as OLED, OPV, etc.

備註

連絡單位 (專責單位/部門名稱)

智權技轉組

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03-4227151轉27076

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