氮化鎵高電子移動率電晶體的缺陷檢測方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

110113424

專利證號

I 771983

專利獲證名稱

氮化鎵高電子移動率電晶體的缺陷檢測方法

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2022/07/21

技術說明

一種氮化鎵高電子移動率電晶體的缺陷檢測方法，用以解決習知的缺陷檢測方法難以確認缺陷部位及測試過程緩慢的問題。係包含：測量一氮化鎵高電子移動率電晶體的數個電性特徵；將該氮化鎵高電子移動率電晶體進行劣化測試後，再測量該數個電性特徵；以不同波長之數個光源輪流照射該氮化鎵高電子移動率電晶體，測量各該光源照射時的該數個電性特徵；及比對該數個電性特徵在上述步驟的變化，判斷該氮化鎵高電子移動率電晶體的缺陷部位。 A defect detection method of GaN high electron mobility transistor is provided to solve the problem of difficulty in identifying defective parts and slow testing process of the conventional defect detection method. The steps of the detection method includes measuring a plurality of electrical characteristics of a GaN high electron mobility transistor, measuring the plurality of electrical characteristics after accelerated life testing of the GaN high electron mobility transistor, measuring the plurality of electrical characteristics when a plurality of light with different wavelengths illuminate the GaN high electron mobility transistor, and comparing the plurality of electrical characteristics in the above steps to determine defective parts of the GaN high electron mobility transistor.

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