METHOD FOR RECOVERING RESOURCE FROM CIGS THIN-FILM SOLAR CELL

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

17/078,306

專利證號

US 11,374,144 B2

專利獲證名稱

METHOD FOR RECOVERING RESOURCE FROM CIGS THIN-FILM SOLAR CELL

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2022/06/28

技術說明

一種薄膜太陽能電池的回收方法，透過低溫物理性分離方式，將薄膜太陽能電池從多層結構分離為二大部分，可避免習知利用高溫造成金屬元素擴散的問題，而可減低後續處理的元素複雜度。此外，再利用單一萃取液(D2EHPA)搭配特定的萃取條件，進行多次萃取，而得以有效率地將銅、銦、鎵離子個別地從混合液中萃取出，並可在經過沉澱及氧化燒結後得到高純度的金屬氧化物，而得以回收再利用。 This invention provides a recycling method for thin film solar cell. Through low-temperature physical separation, thin-film solar cells are separated from the multilayer structure into two parts which can avoid the problem of metal element diffusion caused by high temperature and reduce the complexity of subsequent processing. In addition, by using a single extraction solution (D2EHPA) with specific extraction conditions to perform multiple extractions, so that copper, indium, and gallium ions can be extracted from the mixture efficiently and high purity metal oxides are obtained after precipitated and sintered.

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